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Description
Jul 17, 2007 GENERAL: RA30H4552M1 and RA30H4047M1 use MOS FET device. MOS FET devices have lower surge endurance compared with silicon Abstract. As companies implement wireless features into their portfolio, they may require new expertise to their staff. While some may need to become proficient Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,. Professional Mobile Radios, Amateur Radios Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,. Professional Mobile Radios, Amateur Radios,
| Part Number | RA30H4047M1 |
| Brand | Mitsubishi Electric |
| Image |  |
RA30H4047M1
MITSU
1000
1.86
Jinmingsheng Technology (HK) Co.,Limited
RA30H4047M1
MITSUBSHI
500
2.515
Sino Star Electronics (HK) Co.,Limited
RA30H4047M1
MTSUBISH
400
3.17
ZHW High-tech (HK) Co., Limited
RA30H4047M1
MITS
11030
3.825
N&S Electronic Co., Limited
RA30H4047M1
MITSUBISH
15000
4.48
Junzhan Electronic (HK) Limited
