Mitsubishi Electric

Description

DESCRIPTION. The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for. 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1= VGG2=0V), only a Feb 21, 2007 Recommendation of the output power control for RA45H7687M1 . AN-900-026-B. Application Note for Silicon RF Power Semiconductors. 2/8. ERV=15000ohm/3.4 VxBV 15000ohm. (1). VGG1=15000ohmxBV/(ERV + 15000ohm). (2). For example, when BV shall be set at 5V, ERV is putting 5V into equation May 10, 2007 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 . AN-900- 027-B. Application Note for Silicon RF Power Semiconductors. 2/9. Freq.: 896MHz. -30. -20. -10. 0. 10. 20. 30. 40. 2. 4. 6. 8. 10. 12. 14. 16. 18. 20. Pin [dBm ]. Ga in. [d. B. ] R e lativ e. Ph as e. [d e g. ] No.1. No.2. No.3. Gain. Ph. -30. Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,. Professional Mobile Radios, Amateur Radios and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. LINE UP. SELECTION MAP. DESCRIPTION. The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for. 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases.